features maximum ratings and electrical characteristics rating at 25 o c ambient temperature unless otherwise specified. single phase, half wave, 60 hz, resistive or inductive load. for capacitive load, derate current by 20% type number symbol byv 26a byv 26b byv 26c byv 26d byv 26e byv 26g units maximum recurrent peak reverse voltage v rrm maximum dc blocking voltage v dc maximum average forward rectified current .375 (9.5mm) lead length @t a = 55 o c i (av) 1.0 a peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load (jedec method ) i fsm 30 a maximum instantaneous forward voltage @ 1.0a @ v f maximum dc reverse current @ t a =25 o c at rated dc blocking voltage @ t a =150 o c i r 5.0 100 ua ua maximum reverse recovery time (note 1) trr operating temperature range t j -55 to +175 o c storage temperature range t stg -55 to +175 o c notes: 1. reverse recovery test conditions: i f =0.5a, i r =1.0a, i rr =0.25a 2. measured at 1 mhz and applied reverse voltage of 4.0 v d.c. 3. mount on cu-pad size 5mm x 5mm on pcb. sod-57 unit: inch(mm) glass passivated junction hermetically sealed package very low switching losses low reverse current high reverse voltage applications switched mode power supplies highfrequency inverter circuits 94 9539 200v 400v 600v 800v 1000v 1400v v 300v 500v 700v 900v 1100v 1500v v 30 75 ns a =25 o c t @ 1.0a @ a =175 o c t v 2.5 1.3 typical junction capacitance ( note 2 ) cj 45 pf typical thermal resistance (note 3) r ja o c /w 40 maximum reverse recovery current slope dir/dt @ if=1a, vr=30v, dif/dt = 1a / us dv/dt 7 a/us ? byv26a thru byv26g pb byv26a thru byv26g 1.0 amp.ultra fast recovery rectifiers pb free plating product ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 1/2 free datasheet http:///
characteristics (t j = 25 c unless otherwise specified) 0 40 80 120 160 0 100 200 300 400 600 p maximum reverse power dissipation ( mw ) r t j junction temperature ( c ) 200 95 9728 500 r thja =100k/w 200v 800v 600v 400v r thja =45k/w v r =1000v figure 1. max. reverse power dissipation vs. junction temperature 0 40 80 120 160 0.1 1 10 100 1000 t j junction temperature ( c ) 200 95 9729 i reverse current ( a ) r v r =v rrm figure 2. max. reverse current vs. junction temperature 0 40 80 120 160 0 0.2 0.4 0.6 0.8 1.2 i average forward current ( a ) fav t amb ambient temperature ( c ) 200 95 9730 1.0 r thja =100k/w r thja =45k/w pcb l=10mm figure 3. max. average forward current vs. ambient temperature 0 2345 0.001 0.01 0.1 1 10 7 95 9731 i forward current ( a ) f v f forward voltage ( v ) 16 t j =25 c t j = 175 c figure 4. max. forward current vs. forward voltage ? byv26a thru byv26g ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 2/2 free datasheet http:///
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